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標題: Enhanced thermal dissipation and light output of GaN/sapphire light-emitting diode by direct Cu electroplating
作者: Horng, R.H.
Chiang, C.C.
Wuu, D.S.
Hsiao, H.Y.
Lin, H.I.
關鍵字: technology
Project: Electrochemical and Solid State Letters
期刊/報告no:: Electrochemical and Solid State Letters, Volume 11, Issue 11, Page(s) H300-H302.
Using the self-alignment lithography and electroplating techniques, a lateral-electrodes GaN light-emitting diode (LED) with a microreflective cup and heat spreader has been demonstrated. The photoresist is used to be the electroplating forms and to produce the microreflective cup and heat spreader. Under 1 A injection, this type of LED presents an output power of 700 mW and a power conversion efficiency is up to two times as compared to that of the LEDs only on sapphire without a current spreader. The performance of LEDs with a microreflective cup and heat spreader is better than the vertical-electrode LEDs on Cu substrate. (C) 2008 The Electrochemical Society.
ISSN: 1099-0062
DOI: 10.1149/1.2972992
Appears in Collections:材料科學與工程學系

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