Please use this identifier to cite or link to this item:
|標題:||Enhanced thermal dissipation and light output of GaN/sapphire light-emitting diode by direct Cu electroplating||作者:||Horng, R.H.
|關鍵字:||technology||Project:||Electrochemical and Solid State Letters||期刊/報告no：:||Electrochemical and Solid State Letters, Volume 11, Issue 11, Page(s) H300-H302.||摘要:||
Using the self-alignment lithography and electroplating techniques, a lateral-electrodes GaN light-emitting diode (LED) with a microreflective cup and heat spreader has been demonstrated. The photoresist is used to be the electroplating forms and to produce the microreflective cup and heat spreader. Under 1 A injection, this type of LED presents an output power of 700 mW and a power conversion efficiency is up to two times as compared to that of the LEDs only on sapphire without a current spreader. The performance of LEDs with a microreflective cup and heat spreader is better than the vertical-electrode LEDs on Cu substrate. (C) 2008 The Electrochemical Society.
|Appears in Collections:||材料科學與工程學系|
Show full item record
TAIR Related Article
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.