Enhanced thermal dissipation and light output of GaN/sapphire light-emitting diode by direct Cu electroplating

DSpace CRIS

Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43912

標題:	Enhanced thermal dissipation and light output of GaN/sapphire light-emitting diode by direct Cu electroplating
作者:	Horng, R.H. 洪瑞華 Chiang, C.C. Wuu, D.S. Hsiao, H.Y. Lin, H.I. 武東星
關鍵字:	technology
Project:	Electrochemical and Solid State Letters
期刊/報告no：:	Electrochemical and Solid State Letters, Volume 11, Issue 11, Page(s) H300-H302.
摘要:	Using the self-alignment lithography and electroplating techniques, a lateral-electrodes GaN light-emitting diode (LED) with a microreflective cup and heat spreader has been demonstrated. The photoresist is used to be the electroplating forms and to produce the microreflective cup and heat spreader. Under 1 A injection, this type of LED presents an output power of 700 mW and a power conversion efficiency is up to two times as compared to that of the LEDs only on sapphire without a current spreader. The performance of LEDs with a microreflective cup and heat spreader is better than the vertical-electrode LEDs on Cu substrate. (C) 2008 The Electrochemical Society.
URI:	http://hdl.handle.net/11455/43912
ISSN:	1099-0062
DOI:	10.1149/1.2972992
Appears in Collections:	材料科學與工程學系

Show full item record

TAIR Related Article

Check