Fabrication of amorphous si thin-film transistors on an engineered parylene template using a direct separation process

Abstract

This article reports on the fabrication of flexible amorphous silicon (a-Si) thin-film transistors (TFTs) on a parylene template carried by a glass plate without any adhesive. The a-Si TFTs can be separated directly from the glass carrier after a process temperature up to 220 degrees C. The performance of a-Si TFTs on the engineered parylene template (parylene/SiNx/parylene) has nearly identical electrical characteristics as those of the TFTs directly on a glass substrate. After the 10 mm radius bending test for 10(4) times, the a-Si TFTs still exhibit good transistor behavior with the on-off current ratio exceeding 10(5) and electron mobility of 0.252 cm(2)/V s. (C) 2007 The Electrochemical Society.