Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43922
DC FieldValueLanguage
dc.contributor.authorHorng, R.H.en_US
dc.contributor.author洪瑞華zh_TW
dc.contributor.authorPan, C.T.en_US
dc.contributor.authorTsai, T.Y.en_US
dc.contributor.authorWuu, D.S.en_US
dc.contributor.author武東星zh_TW
dc.date2011zh_TW
dc.date.accessioned2014-06-06T08:11:41Z-
dc.date.available2014-06-06T08:11:41Z-
dc.identifier.issn1099-0062zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/43922-
dc.description.abstractIn this paper, a patterned sacrificial layer structure comprised of 3 mu m-wide SiO(2) narrow strips and 3 mu m spacing between strips fabricated on sapphire substrate was proposed. The structure was used not only to improve GaN epilayer quality, but also as a sacrificial layer structure. The GaN light emitting diodes (LEDs) covered by the Cu substrate was fabricated after the GaN epitaxy layer was grown on the sapphire by lateral epitaxial overgrowth. Chemical etching using hydrofluoric acid was conducted to remove the aforementioned SiO(2) strips, and hence transform them into narrow tunnels. The GaN LEDs with the Cu substrate detached from the sapphire substrate after interface strain was increased, which demonstrates that n-side-up vertical GaN LEDs could be more easily obtained using chemical lift-off technology without laser damage compared with the laser lift-off technique. (C) 2011 The Electrochemical Society. [DOI: 10.1149/1.3582352] All rights reserved.en_US
dc.language.isoen_USzh_TW
dc.relationElectrochemical and Solid State Lettersen_US
dc.relation.ispartofseriesElectrochemical and Solid State Letters, Volume 14, Issue 7, Page(s) H281-H284.en_US
dc.relation.urihttp://dx.doi.org/10.1149/1.3582352en_US
dc.subjectlight-emitting-diodesen_US
dc.subjectpatterned sapphireen_US
dc.subjectmirroren_US
dc.subjectnmen_US
dc.titleTransferring Thin Film GaN LED Epi-Structure to the Cu Substrate by Chemical Lift-Off Technologyen_US
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1149/1.3582352zh_TW
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.fulltextno fulltext-
item.cerifentitytypePublications-
item.grantfulltextnone-
item.languageiso639-1en_US-
item.openairetypeJournal Article-
Appears in Collections:材料科學與工程學系
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