Please use this identifier to cite or link to this item:
標題: Improved Conversion Efficiency of Textured InGaN Solar Cells With Interdigitated Imbedded Electrodes
作者: Horng, R.H.
Chu, M.T.
Chen, H.R.
Liao, W.Y.
Wu, M.H.
Chen, K.F.
Wuu, D.S.
關鍵字: Electrode shading;interdigitated imbedded electrodes (IIEs);n-GaN/i-InGaN/p-GaN solar cell;textured;epitaxy;films;gan
Project: Ieee Electron Device Letters
期刊/報告no:: Ieee Electron Device Letters, Volume 31, Issue 6, Page(s) 585-587.
Textured n-GaN/i-InGaN/p-GaN solar cells with interdigitated imbedded electrodes (IIEs) eliminating the electrode-shading loss have been investigated. In the absence of the electrode-shading effect, the optimized textured solar cell exhibits a conversion efficiency of 1.03%, which is 78% and 47% higher than those of the conventional structure and the structure with mirror coated on silicon substrate with electrode shading, respectively. The short-circuit current density of this textured IIE device is about 0.65 mA/cm(2), which is 71% and 44% higher than those of the two compared structures, respectively.
ISSN: 0741-3106
DOI: 10.1109/led.2010.2046615
Appears in Collections:材料科學與工程學系

Show full item record

Google ScholarTM




Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.