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|標題:||Improved Conversion Efficiency of Textured InGaN Solar Cells With Interdigitated Imbedded Electrodes||作者:||Horng, R.H.
|關鍵字:||Electrode shading;interdigitated imbedded electrodes (IIEs);n-GaN/i-InGaN/p-GaN solar cell;textured;epitaxy;films;gan||Project:||Ieee Electron Device Letters||期刊/報告no：:||Ieee Electron Device Letters, Volume 31, Issue 6, Page(s) 585-587.||摘要:||
Textured n-GaN/i-InGaN/p-GaN solar cells with interdigitated imbedded electrodes (IIEs) eliminating the electrode-shading loss have been investigated. In the absence of the electrode-shading effect, the optimized textured solar cell exhibits a conversion efficiency of 1.03%, which is 78% and 47% higher than those of the conventional structure and the structure with mirror coated on silicon substrate with electrode shading, respectively. The short-circuit current density of this textured IIE device is about 0.65 mA/cm(2), which is 71% and 44% higher than those of the two compared structures, respectively.
|Appears in Collections:||材料科學與工程學系|
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