Improved Conversion Efficiency of Textured InGaN Solar Cells With Interdigitated Imbedded Electrodes

DSpace CRIS

Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43925

標題:	Improved Conversion Efficiency of Textured InGaN Solar Cells With Interdigitated Imbedded Electrodes
作者:	Horng, R.H. 洪瑞華 Chu, M.T. Chen, H.R. Liao, W.Y. Wu, M.H. Chen, K.F. Wuu, D.S. 武東星
關鍵字:	Electrode shading;interdigitated imbedded electrodes (IIEs);n-GaN/i-InGaN/p-GaN solar cell;textured;epitaxy;films;gan
Project:	Ieee Electron Device Letters
期刊/報告no：:	Ieee Electron Device Letters, Volume 31, Issue 6, Page(s) 585-587.
摘要:	Textured n-GaN/i-InGaN/p-GaN solar cells with interdigitated imbedded electrodes (IIEs) eliminating the electrode-shading loss have been investigated. In the absence of the electrode-shading effect, the optimized textured solar cell exhibits a conversion efficiency of 1.03%, which is 78% and 47% higher than those of the conventional structure and the structure with mirror coated on silicon substrate with electrode shading, respectively. The short-circuit current density of this textured IIE device is about 0.65 mA/cm(2), which is 71% and 44% higher than those of the two compared structures, respectively.
URI:	http://hdl.handle.net/11455/43925
ISSN:	0741-3106
DOI:	10.1109/led.2010.2046615
Appears in Collections:	材料科學與工程學系

Show full item record

TAIR Related Article

Check