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標題: Effect of resonant cavity in wafer-bonded green InGaN LED with dielectric and silver mirrors
作者: Horng, R.H.
Wang, W.K.
Huang, S.Y.
Wuu, D.S.
關鍵字: GaN;InGaN;light-emitting diode (LED);resonant cavity;wafer bonding;molecular-beam epitaxy;surface-emitting laser;wave
Project: Ieee Photonics Technology Letters
期刊/報告no:: Ieee Photonics Technology Letters, Volume 18, Issue 1-4, Page(s) 457-459.
The green InGaN-based resonant cavity light-emitting diodes (RCLEDs) on Si substrates were fabricated using laser liftoff and wafer bonding techniques. Five-pair TiO2-SiO2 distributed Bragg reflectors (reflectivity: 85%) and an Ag metal layer (reflectivity: 99%) were employed as the top and bottom mirrors, respectively. The light output power of the RCLED at room temperature is 1.5 times the magnitude of a similar structure without a resonant cavity at an itkiecting current density of 600 A/cm(2).The mode spectrum exhibits a line width of approximately 5.5 nm at the dominant peak wavelength of 525 urn, which indicates a quality factor of 100. Under various injection current densities, a low thermally induced red shift in the 525-nm emission peak was observed. This indicates that the resonant microcavity effect contributes to the stability of electroluminescence emission wavelength.
ISSN: 1041-1135
DOI: 10.1109/lpt.2005.863177
Appears in Collections:材料科學與工程學系

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