Please use this identifier to cite or link to this item:
|標題:||Enhanced light output in roughened GaN-based light-emitting diodes using electrodeless photoelectrochemical etching||作者:||Hsu, S.C.
|關鍵字:||gallium nitride (GaN);light-emitting diode (LED);light extraction;photoelectrochemical (PEC);wet;efficient||Project:||Ieee Photonics Technology Letters||期刊/報告no：:||Ieee Photonics Technology Letters, Volume 18, Issue 21-24, Page(s) 2472-2474.||摘要:||
We have demonstrated enhanced output power from roughened GaN-based light-emitting diodes (LEDs) by using electrodeless photoelectrochemical etching with a chopped source (ELPEC-CS etching). It was found that the 20-mA output power of the ELPEC-CS treated LED (with roughened surfaces on the top p-type and bottom n-type GaN surface as well as the mesa sidewall) was 1.41 and 2.57 times as high as those LEDs with a roughened p-type GaN surface and a conventional surface, respectively. The light output pattern of the ELPEC-CS treated LED was five times greater than the conventional LED at 0 degrees which was caused by the roughened GaN surface that improved the light extraction efficiency of the LED.
|Appears in Collections:||材料科學與工程學系|
Show full item record
TAIR Related Article
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.