Enhanced light output in roughened GaN-based light-emitting diodes using electrodeless photoelectrochemical etching

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Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43939

標題:	Enhanced light output in roughened GaN-based light-emitting diodes using electrodeless photoelectrochemical etching
作者:	Hsu, S.C. 洪瑞華 Lee, C.Y. Hwang, J.M. Su, J.Y. Wuu, D.S. Horng, R.H. 武東星
關鍵字:	gallium nitride (GaN);light-emitting diode (LED);light extraction;photoelectrochemical (PEC);wet;efficient
Project:	Ieee Photonics Technology Letters
期刊/報告no：:	Ieee Photonics Technology Letters, Volume 18, Issue 21-24, Page(s) 2472-2474.
摘要:	We have demonstrated enhanced output power from roughened GaN-based light-emitting diodes (LEDs) by using electrodeless photoelectrochemical etching with a chopped source (ELPEC-CS etching). It was found that the 20-mA output power of the ELPEC-CS treated LED (with roughened surfaces on the top p-type and bottom n-type GaN surface as well as the mesa sidewall) was 1.41 and 2.57 times as high as those LEDs with a roughened p-type GaN surface and a conventional surface, respectively. The light output pattern of the ELPEC-CS treated LED was five times greater than the conventional LED at 0 degrees which was caused by the roughened GaN surface that improved the light extraction efficiency of the LED.
URI:	http://hdl.handle.net/11455/43939
ISSN:	1041-1135
DOI:	10.1109/lpt.2006.886862
Appears in Collections:	材料科學與工程學系

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