Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrates

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Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43940

標題:	Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrates
作者:	Wuu, D.S. 洪瑞華 Wang, W.K. Shih, W.C. Horng, R.H. Lee, C.E. Lin, W.Y. Fang, J.S. 武東星
關鍵字:	GaN;InGaN;light-emitting diode (LED);near ultraviolet (UV);patterned;sapphire substrate (PSS);light-emitting-diodes;white-light
Project:	Ieee Photonics Technology Letters
期刊/報告no：:	Ieee Photonics Technology Letters, Volume 17, Issue 2, Page(s) 288-290.
摘要:	Near-ultraviolet nitride-based light-emitting diodes (LEDs) with peak emission wavelengths around 410 nm were fabricated onto c-face patterned sapphire substrates (PSS). It was found that the electroluminescence intensity of the PSS LED shown 63% larger than that of the conventional LED. For a typical lamp-form PSS LED operating at a forward current of 20 mA, the output power and external quantum efficiency were estimated to be 10.4 mW and 14.1%, respectively. The improvement in the light intensity could be attributed to the decrease of threading dislocations and the increase of light extraction efficiency in the horizontal direction using a PSS.
URI:	http://hdl.handle.net/11455/43940
ISSN:	1041-1135
DOI:	10.1109/lpt.2004.839012
Appears in Collections:	材料科學與工程學系

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