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標題: Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrates
作者: Wuu, D.S.
Wang, W.K.
Shih, W.C.
Horng, R.H.
Lee, C.E.
Lin, W.Y.
Fang, J.S.
關鍵字: GaN;InGaN;light-emitting diode (LED);near ultraviolet (UV);patterned;sapphire substrate (PSS);light-emitting-diodes;white-light
Project: Ieee Photonics Technology Letters
期刊/報告no:: Ieee Photonics Technology Letters, Volume 17, Issue 2, Page(s) 288-290.
Near-ultraviolet nitride-based light-emitting diodes (LEDs) with peak emission wavelengths around 410 nm were fabricated onto c-face patterned sapphire substrates (PSS). It was found that the electroluminescence intensity of the PSS LED shown 63% larger than that of the conventional LED. For a typical lamp-form PSS LED operating at a forward current of 20 mA, the output power and external quantum efficiency were estimated to be 10.4 mW and 14.1%, respectively. The improvement in the light intensity could be attributed to the decrease of threading dislocations and the increase of light extraction efficiency in the horizontal direction using a PSS.
ISSN: 1041-1135
DOI: 10.1109/lpt.2004.839012
Appears in Collections:材料科學與工程學系

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