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|標題:||High-efficiency 1-mm(2) AlGaInP LEDs sandwiched by ITO omni-directional reflector and current-spreading layer||作者:||Hsu, S.C.
|關鍵字:||AlGaInP;current spreading layer;light-emitting diode (LED);omni-directional reflector (ODR);light-emitting-diodes;quantum efficiency||Project:||Ieee Photonics Technology Letters||期刊/報告no：:||Ieee Photonics Technology Letters, Volume 19, Issue 5-8, Page(s) 492-494.||摘要:||
A 1-mm(2) AlGaInP light-emitting diode (LED) sandwiched by an onmi-directional reflector (ODR) and currentspreading layer is presented. The vertical-conducting bottom ODR consists of p-GaP, dispersive dot-contacts of Au-AuBe-Au acting as ohmic contacts, an intermediate low-refractive index layer of indium-tin-oxide, and a silver layer. A Si substrate, which acted as a heat sink, was bonded to the ODR-covered LED structure using a metal-to-metal bonding process. It was found that the maximum output power of the ODR-LED on Si reached 304 mW at 650 mA, and the output power did not saturate up to 650-mA injection current. The external quantum efficiency of 31.8% was obtained at 100 mA, and 19.4% achieved even at currents of up to 800 mA. Furthermore, under a forward current of 350 mA, the ODR-LEDs remained highly reliable after 1000-h testing at room temperature.
|Appears in Collections:||材料科學與工程學系|
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