Please use this identifier to cite or link to this item:
|標題:||High-power GaN-mirror-Cu light-emitting diodes for vertical current injection using laser liftoff and electroplating techniques||作者:||Lin, W.Y.
|關鍵字:||electroplating;GaN;laser liftoff (LLO);light-emitting diode (LED);output;ingan||Project:||Ieee Photonics Technology Letters||期刊/報告no：:||Ieee Photonics Technology Letters, Volume 17, Issue 9, Page(s) 1809-1811.||摘要:||
A large-area (1 x 1 mm) vertical conductive GaN-mirror-Cu light-emitting diode (LED) fabricated, using the laser liftoff and electroplating techniques is demonstrated. Selective p-GaN top area. was first electroplated by the thick copper film, and then an excimer laser was employed to separate the GaN thin film from the sapphire substrate. The luminance, intensity of the vertical conductive p-side-down GaN-mirror-Cu LED presented about 2.7 times in magnitude as compared with that of the original GaN-sapphire LED (at 20 mA). The light output power for the GaN-mirror-Cu LED was about twofold stronger (at 500 mA). A more stable peak wavelength shift under high current injection was also observed.
|Appears in Collections:||材料科學與工程學系|
Show full item record
TAIR Related Article
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.