Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43944
標題: High-power GaN-mirror-Cu light-emitting diodes for vertical current injection using laser liftoff and electroplating techniques
作者: Lin, W.Y.
洪瑞華
Wuu, D.S.
Pan, K.F.
Huang, S.H.
Lee, C.E.
Wang, W.K.
Hsu, S.C.
Su, Y.Y.
Huang, S.Y.
Horng, R.H.
武東星
關鍵字: electroplating;GaN;laser liftoff (LLO);light-emitting diode (LED);output;ingan
Project: Ieee Photonics Technology Letters
期刊/報告no:: Ieee Photonics Technology Letters, Volume 17, Issue 9, Page(s) 1809-1811.
摘要: 
A large-area (1 x 1 mm) vertical conductive GaN-mirror-Cu light-emitting diode (LED) fabricated, using the laser liftoff and electroplating techniques is demonstrated. Selective p-GaN top area. was first electroplated by the thick copper film, and then an excimer laser was employed to separate the GaN thin film from the sapphire substrate. The luminance, intensity of the vertical conductive p-side-down GaN-mirror-Cu LED presented about 2.7 times in magnitude as compared with that of the original GaN-sapphire LED (at 20 mA). The light output power for the GaN-mirror-Cu LED was about twofold stronger (at 500 mA). A more stable peak wavelength shift under high current injection was also observed.
URI: http://hdl.handle.net/11455/43944
ISSN: 1041-1135
DOI: 10.1109/lpt.2005.852321
Appears in Collections:材料科學與工程學系

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