Please use this identifier to cite or link to this item:
標題: Performance of Flip-Chip Thin-Film GaN Light-Emitting Diodes With and Without Patterned Sapphires
作者: Horng, R.H.
Hu, H.L.
Chu, M.T.
Tsai, Y.L.
Tsai, Y.J.
Hsu, C.P.
Wuu, D.S.
關鍵字: Flip-chip (FC);patterned sapphire substrate (PSS);thin-film technique
Project: Ieee Photonics Technology Letters
期刊/報告no:: Ieee Photonics Technology Letters, Volume 22, Issue 8, Page(s) 550-552.
We report on improved device performance of flip-chip (FC) GaN-based light-emitting diodes (LEDs) by combining patterned sapphire substrate (PSS) and thin-film techniques. It was found that an FC LED grown on a conventional planar sapphire exhibits a power enhancement factor of only 36.3% after the thin-film processes of substrate removal and surface roughening. In contrast, the as-fabricated FC LED grown on a PSS showed a power enhancement factor of up to 62.3% without any postprocess as compared with the light output power of an original conventional FC LED. Further intensity improvement to 74.4% could be achieved for the FC LED/PSS sample with the thin-film processes.
ISSN: 1041-1135
DOI: 10.1109/lpt.2010.2042590
Appears in Collections:材料科學與工程學系

Show full item record

Google ScholarTM




Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.