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|標題:||Performance of Flip-Chip Thin-Film GaN Light-Emitting Diodes With and Without Patterned Sapphires||作者:||Horng, R.H.
|關鍵字:||Flip-chip (FC);patterned sapphire substrate (PSS);thin-film technique||Project:||Ieee Photonics Technology Letters||期刊/報告no：:||Ieee Photonics Technology Letters, Volume 22, Issue 8, Page(s) 550-552.||摘要:||
We report on improved device performance of flip-chip (FC) GaN-based light-emitting diodes (LEDs) by combining patterned sapphire substrate (PSS) and thin-film techniques. It was found that an FC LED grown on a conventional planar sapphire exhibits a power enhancement factor of only 36.3% after the thin-film processes of substrate removal and surface roughening. In contrast, the as-fabricated FC LED grown on a PSS showed a power enhancement factor of up to 62.3% without any postprocess as compared with the light output power of an original conventional FC LED. Further intensity improvement to 74.4% could be achieved for the FC LED/PSS sample with the thin-film processes.
|Appears in Collections:||材料科學與工程學系|
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