Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43954
標題: Thermally stable mirror structures for vertical-conducting GaN/Mirror/Si light-emitting diodes
作者: Huang, S.H.
洪瑞華
Horng, R.H.
Li, S.L.
Yen, K.W.
Wuu, D.S.
Lin, C.K.
Liu, H.
武東星
關鍵字: gaN;laser liftoff;light-emitting diode (LED);thermally stable mirror;wafer bonding;p-type gan;ohmic contact
Project: Ieee Photonics Technology Letters
期刊/報告no:: Ieee Photonics Technology Letters, Volume 19, Issue 21-24, Page(s) 1913-1915.
摘要: 
Vertical-conducting GaN/mirror/Si light-emitting diodes (LEDs) with thermally stable mirrors have been fabricated using a combination of wafer-bonding and laser liftoff techniques. The thermal stabilities of NiO-Ag, NiO-Ag-Ni, and NiO-Au-Ag mirrors and their effects on the performance of mirror-substrate LEDs were studied. It is found that the NiO-Ag-Ni mirror presents the best performance, where the specific contact resistance and the reflectivity can achieve 5.1 x 10(-3) ohm.cm(2) and 92% at 470 nm after oxidation annealing at 500 degrees C for 10 min. The top Ni layer could protect the Ag mirror from clustering during the thermal treatment process. The output powers of the GaN-sapphire and GaN/mirror/Si LEDs with NiO-Au-Ag and NiO-Ag-Ni mirrors show 4.5, 4.3, and 13 mW, respectively.
URI: http://hdl.handle.net/11455/43954
ISSN: 1041-1135
DOI: 10.1109/lpt.2007.908352
Appears in Collections:材料科學與工程學系

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