Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43961
標題: Effects of transparent conductive layers on characteristics of InGaN-based green resonant-cavity light-emitting diodes
作者: Huang, S.Y.
洪瑞華
Horng, R.H.
Wuu, D.S.
Wang, W.K.
Yu, T.E.
Lin, P.R.
Juang, F.S.
武東星
關鍵字: resonant-cavity light-emitting diode (RCLED);InGaN;indium-tin oxide;(ITO);molecular-beam epitaxy;fabrication;efficiency;wave
Project: Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers
期刊/報告no:: Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers, Volume 46, Issue 6A, Page(s) 3416-3419.
摘要: 
InGaN-based green resonant-cavity light-emitting diodes (RCLEDs) with indium-tin oxide (ITO) and Ni/Au transparent conductive layers (TCLs) have been fabricated on Si substrates by laser lift-off and wafer bonding techniques. The RCLED structure consisted of an InGaN/GaN multiple-quantum-well active layer between the top (5 pairs) and bottom (7.5 pairs) dielectric TiO2/SiO2 distributed Bragg reflectors. It was found that the cavity mode of the RCLED with an ITO TCL shows a linewidth of 4 nm at the main emission peak at 494 nm. The electroluminescence intensity of the ITO-RCLED sample is 1.73 times higher in magnitude than that of the Ni/Au-RCLED one. It was found that the quality factor of the InGaN RCLED structure increased from 84 to 120 when the Ni/Au TCL was replaced by ITO. The improvements in both the optical output and the quality factor could be attributed to the higher optical transmittance of the ITO TCL enhancing the spontaneous emission at its resonant wavelength.
URI: http://hdl.handle.net/11455/43961
ISSN: 0021-4922
DOI: 10.1143/jjap.46.3416
Appears in Collections:材料科學與工程學系

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