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|標題:||Fabrications of Si thin-film solar cells by hot-wire chemical vapor deposition and laser doping techniques||作者:||Lien, S.Y.
|關鍵字:||silicon solar cell;laser doping;hot-wire chemical vapor deposition;amorphous-silicon films;hwcvd||Project:||Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers||期刊/報告no：:||Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers, Volume 45, Issue 4B, Page(s) 3516-3518.||摘要:||
In this paper, we report a novel low-temperature process for fabricating a Si thin-film solar cell on a glass substrate. The cell structure was composed of glass/Al/p-i-n Si/Ag (grid), where the Si intrinsic layer was deposited by hot-wire chemical vapor deposition. All the doped Si layers were produced using a postgrowth laser-doping process. The hot-wire-deposited amorphous, microcrystalline and polycrystalline Si films showed significant differences in band gap and structural properties as determined by Raman spectroscopy, spectral optical transmission measurements, and transmission electron microscopy. The corresponding crystalline volume fractions were 93, 73, and 12%, respectively. It was found that the best solar cells were fabricated with a Si intrinsic layer deposited at the transition from microcrystalline to polycrystalline regimes. A preliminary efficiency of 1.9% was obtained for an n-i-p structured solar cell on an untextured glass substrate.
|Appears in Collections:||材料科學與工程學系|
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