Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43965
標題: GaN-based green resonant cavity light-emitting diodes
作者: Huang, S.Y.
洪瑞華
Horng, R.H.
Wang, W.K.
Wuu, D.S.
武東星
關鍵字: GaN;resonant cavity light-emitting diodes;laser lift-off;wafer;bonding;distributed Bragg reflector;reflectors
Project: Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers
期刊/報告no:: Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers, Volume 45, Issue 4B, Page(s) 3433-3435.
摘要: 
GaN-based resonant cavity light-emitting diodes (RCLEDs) have been Successfully fabricated on Si substrate by laser lift-off and wafer bonding techniques. A five-pair TiO2/SiO2 dielectric distributed Bragg reflector (DBR) (with 85% reflectivity) and an Ag layer (with 99% reflectivity) were employed as top and bottom mirrors, respectively, for front emission RCLEDs. The room temperature light output power of the RCLED was 1.5 times that of similar LED structures without a top DBR mirror under 20 mA injection current. The cavity modes exhibit a linewidth of 5.5 nm at 525 nm wavelength, which corresponds to a quality factor about 100. Moreover, the full width at half maximum of the emission can be reduced to 35 nm, as a result of the effect of the resonant cavity.
URI: http://hdl.handle.net/11455/43965
ISSN: 0021-4922
DOI: 10.1143/jjap.45.3433
Appears in Collections:材料科學與工程學系

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