Please use this identifier to cite or link to this item:
|標題:||GaN-based green resonant cavity light-emitting diodes||作者:||Huang, S.Y.
|關鍵字:||GaN;resonant cavity light-emitting diodes;laser lift-off;wafer;bonding;distributed Bragg reflector;reflectors||Project:||Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers||期刊/報告no：:||Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers, Volume 45, Issue 4B, Page(s) 3433-3435.||摘要:||
GaN-based resonant cavity light-emitting diodes (RCLEDs) have been Successfully fabricated on Si substrate by laser lift-off and wafer bonding techniques. A five-pair TiO2/SiO2 dielectric distributed Bragg reflector (DBR) (with 85% reflectivity) and an Ag layer (with 99% reflectivity) were employed as top and bottom mirrors, respectively, for front emission RCLEDs. The room temperature light output power of the RCLED was 1.5 times that of similar LED structures without a top DBR mirror under 20 mA injection current. The cavity modes exhibit a linewidth of 5.5 nm at 525 nm wavelength, which corresponds to a quality factor about 100. Moreover, the full width at half maximum of the emission can be reduced to 35 nm, as a result of the effect of the resonant cavity.
|Appears in Collections:||材料科學與工程學系|
Show full item record
TAIR Related Article
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.