Please use this identifier to cite or link to this item:
標題: Surface texturing for wafer-bonded vertical-type GaN/mirror/Si light-emitting diodes
作者: Huang, S.H.
Horng, R.H.
Hsu, S.C.
Chen, T.Y.
Wuu, D.S.
關鍵字: GaN;light-emitting diode (LED);laser lift-off;wafer bonding;surface;texturing;laser lift-off;gan;efficiency;output;films;nm
Project: Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers
期刊/報告no:: Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers, Volume 44, Issue 5A, Page(s) 3028-3031.
An n-side-up GaN/mirror(Pd/Au)/Si light-emitting diode (LED) with surface texturing has been fabricated by a combination of wafer-bonding, laser lift-off, and surface texturing techniques. Two concentrations of KOH solution were used to roughen the n-GaN surface. In order to obtain a uniformly roughened surface, the solution was heated instead of being subjected to photoirradiation. The GaN/Pd/Au/Si LEDs with surface texturing exhibited a maximum luminance intensity of 130 mcd (at 20 mA) with a forward voltage of 3.2 V. The luminance intensity is over two times larger than that of the original planar GaN/sapphire LEDs (at 20 mA). Under high current injection, the surface textured GaN/Pd/Au/Si LEDs also showed a more stable luminance intensity. This feature is attributed to the Si substrate providing a good heat sink and surface roughening enhancing the external quantum efficiency. Furthermore, the n-side-up GaN/mirror(Pd/Au)/Si LEDs with surface texturing have been demonstrated to have high reliability.
ISSN: 0021-4922
DOI: 10.1143/jjap.44.3028
Appears in Collections:材料科學與工程學系

Show full item record

Google ScholarTM




Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.