Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43976
標題: Thinning technology for lithium niobate wafer by surface activated bonding and chemical mechanical polishing
作者: Wu, C.C.
洪瑞華
Horng, R.H.
Wuu, D.S.
Chen, T.N.
Ho, S.S.
Ting, C.J.
Tsai, H.Y.
武東星
關鍵字: lithium niobate (LiNbO3) substrate;wafer bonding;chemical mechanical;polishing;plasma;oxygen plasma;linbo3;modulators;films
Project: Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers
期刊/報告no:: Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers, Volume 45, Issue 4B, Page(s) 3822-3827.
摘要: 
A lithium niobate (LiNbO3) hybrid wafer was developed by a combination of wafer bonding and chemical mechanical polishing. In this study, various plasma ambients were applied to activate the surface of LiNbO3 and Si substrate to bond the wafers at room temperature. After the surface activated bonding process, the LiNbO3 substrate was lapped by chemical mechanical polishing. The thickness of the 10cm diameter LiNbO3 substrate can be decreased from 400 to 10 mu m without generating serious cracks. Under the optimum lapping parameters, a 1.5 nm surface roughness of the LiNbO3 film can be obtained.
URI: http://hdl.handle.net/11455/43976
ISSN: 0021-4922
DOI: 10.1143/jjap.45.3822
Appears in Collections:材料科學與工程學系

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