Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43979
標題: Characterization of large-area AlGaInP/mirror/Si light-emitting diodes fabricated by wafer bonding
作者: Horng, R.H.
洪瑞華
Huang, S.H.
Wuu, D.S.
Jiang, Y.Z.
武東星
關鍵字: high-brightness LEDs;wafer bonding technique;high-thermal-conductivity;Si substrate;mirror substrate;external quantum efficiency;natural lithography
Project: Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers
期刊/報告no:: Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, Volume 43, Issue 5A, Page(s) 2510-2514.
摘要: 
High-brightness AlGaInP/mirror/barrier/Si light-emitting diodes (LEDs) with vertical electrodes were fabricated using a wafer bonding technique. The high-thermal-conductivity Si substrate provides a better heat sink (compared with GaP or GaAs), which is a particularly important characteristic for high-power, large-area emitter applications. It allows for saturation of the small-area LED (300 x 300 mum(2)) after 150 mA injection and for the large-area LED (1200 x 1200 mum(2)) to increase output power even at 300 mA injection. The light output of the large-area vertical-conducting LED is mainly affected by the top-side (i.e., n-AlGaInP cladding) electrode design, where an interdigitated-finger electrode provides the better current spreading performance and prevents the current crowding problem. The extent of junction heating on LED samples (300 x 300-1200 x 1200 mum(2)) can also be evaluated from the corresponding electroluminescence spectra and emission-peak-wavelength driven by different injection current values. Finally, using a natural lithography technique, the mirror-substrate (MS) LEDs with textured surfaces present a brightness of 10 cd, which is about 4 cd brighter than that of the MS LED without a textured surface. With a combination of the MS wafer bonding and surface texturing techniques, thermal management in packaging becomes the key factor in further enhancing the external quantum efficiency of large-area LEDs under high flux operation.
URI: http://hdl.handle.net/11455/43979
ISSN: 0021-4922
DOI: 10.1143/jjap.43.2510
Appears in Collections:材料科學與工程學系

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