Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43985
標題: Wafer-bonded 850-nm vertical-cavity surface-emitting lasers on Si substrate with metal mirror
作者: Horng, R.H.
洪瑞華
Wuu, D.S.
武東星
關鍵字: vertical-cavity surface-emitting laser (VCSEL);mirror substrate;wafer;bonding;distributed Bragg reflector;diodes;gaas
Project: Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers
期刊/報告no:: Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, Volume 41, Issue 9, Page(s) 5849-5852.
摘要: 
An 850-nm vertical-cavity surface-emitting laser (VCSEL) with a Au/AuBe/TaN/Ta/Si mirror substrate has been realized by low-temperature wafer bonding. It is found that the mirror substrate can be used as the bottom reflector to enhance the reflectivity of a bottom distributed Bragg reflector. The metal mirrors also served as the adhesive layers and ohmic contact layers to bond the Si substrate and the VCSEL epilayers. When the mirror-substrate-bonded VCSELs are excited by continuous-wave current at room temperature, they exhibit lower threshold cur-rent density and differential resistance (22 A/cm(2), 35 Ohm) as compared with the original VCSELs on GaAs substrates (77 A/cm(2), 60 Ohm). This feature is attributed to the finding that the Si substrate provides a good heat sink.
URI: http://hdl.handle.net/11455/43985
ISSN: 0021-4922
DOI: 10.1143/jjap.41.5849
Appears in Collections:材料科學與工程學系

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