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http://hdl.handle.net/11455/43985
標題: | Wafer-bonded 850-nm vertical-cavity surface-emitting lasers on Si substrate with metal mirror | 作者: | Horng, R.H. 洪瑞華 Wuu, D.S. 武東星 |
關鍵字: | vertical-cavity surface-emitting laser (VCSEL);mirror substrate;wafer;bonding;distributed Bragg reflector;diodes;gaas | Project: | Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers | 期刊/報告no:: | Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, Volume 41, Issue 9, Page(s) 5849-5852. | 摘要: | An 850-nm vertical-cavity surface-emitting laser (VCSEL) with a Au/AuBe/TaN/Ta/Si mirror substrate has been realized by low-temperature wafer bonding. It is found that the mirror substrate can be used as the bottom reflector to enhance the reflectivity of a bottom distributed Bragg reflector. The metal mirrors also served as the adhesive layers and ohmic contact layers to bond the Si substrate and the VCSEL epilayers. When the mirror-substrate-bonded VCSELs are excited by continuous-wave current at room temperature, they exhibit lower threshold cur-rent density and differential resistance (22 A/cm(2), 35 Ohm) as compared with the original VCSELs on GaAs substrates (77 A/cm(2), 60 Ohm). This feature is attributed to the finding that the Si substrate provides a good heat sink. |
URI: | http://hdl.handle.net/11455/43985 | ISSN: | 0021-4922 | DOI: | 10.1143/jjap.41.5849 |
Appears in Collections: | 材料科學與工程學系 |
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