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|標題:||Wafer-bonded 850-nm vertical-cavity surface-emitting lasers on Si substrate with metal mirror||作者:||Horng, R.H.
|關鍵字:||vertical-cavity surface-emitting laser (VCSEL);mirror substrate;wafer;bonding;distributed Bragg reflector;diodes;gaas||Project:||Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers||期刊/報告no：:||Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes & Review Papers, Volume 41, Issue 9, Page(s) 5849-5852.||摘要:||
An 850-nm vertical-cavity surface-emitting laser (VCSEL) with a Au/AuBe/TaN/Ta/Si mirror substrate has been realized by low-temperature wafer bonding. It is found that the mirror substrate can be used as the bottom reflector to enhance the reflectivity of a bottom distributed Bragg reflector. The metal mirrors also served as the adhesive layers and ohmic contact layers to bond the Si substrate and the VCSEL epilayers. When the mirror-substrate-bonded VCSELs are excited by continuous-wave current at room temperature, they exhibit lower threshold cur-rent density and differential resistance (22 A/cm(2), 35 Ohm) as compared with the original VCSELs on GaAs substrates (77 A/cm(2), 60 Ohm). This feature is attributed to the finding that the Si substrate provides a good heat sink.
|Appears in Collections:||材料科學與工程學系|
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