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|標題:||High-power AlGaInP light-emitting diodes with patterned copper substrates by electroplating||作者:||Horng, R.H.
|關鍵字:||AlGaInP;copper substrate;electroplating;light emitting diodes (LEDs);external quantum efficiency||Project:||Japanese Journal of Applied Physics Part 2-Letters & Express Letters||期刊/報告no：:||Japanese Journal of Applied Physics Part 2-Letters & Express Letters, Volume 43, Issue 4B, Page(s) L576-L578.||摘要:||
(LEDs) to improve both the heat dissipation and substrate light-absorbing problems encountered in conventional A1GaInP/ GaAs LED samples. Especially, this LED samples can be accomplished without additional dicing process. It was found that the peak-spectral wavelength of the AlGaInP LED with an electroplated copper substrate exhibited only about 3 nm shift at 400mA, corresponding to a similar to30degreesC rising in the junction temperature. However, the junction temperature increased to 110degreesC easily for the AlGaInP/GaAs LED sample under a current injection of 400 mA. This indicates that the joule heating is less pronounced for the high-power AlGaInP/mirror/Cu LED sample where the metallic substrate provides a good heat sink.
|Appears in Collections:||材料科學與工程學系|
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