Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43989
標題: High-power AlGaInP light-emitting diodes with patterned copper substrates by electroplating
作者: Horng, R.H.
洪瑞華
Lee, C.E.
Kung, C.Y.
Huang, S.H.
Wuu, D.S.
武東星
關鍵字: AlGaInP;copper substrate;electroplating;light emitting diodes (LEDs);external quantum efficiency
Project: Japanese Journal of Applied Physics Part 2-Letters & Express Letters
期刊/報告no:: Japanese Journal of Applied Physics Part 2-Letters & Express Letters, Volume 43, Issue 4B, Page(s) L576-L578.
摘要: 
(LEDs) to improve both the heat dissipation and substrate light-absorbing problems encountered in conventional A1GaInP/ GaAs LED samples. Especially, this LED samples can be accomplished without additional dicing process. It was found that the peak-spectral wavelength of the AlGaInP LED with an electroplated copper substrate exhibited only about 3 nm shift at 400mA, corresponding to a similar to30degreesC rising in the junction temperature. However, the junction temperature increased to 110degreesC easily for the AlGaInP/GaAs LED sample under a current injection of 400 mA. This indicates that the joule heating is less pronounced for the high-power AlGaInP/mirror/Cu LED sample where the metallic substrate provides a good heat sink.
URI: http://hdl.handle.net/11455/43989
ISSN: 0021-4922
DOI: 10.1143/jjap.43.l576
Appears in Collections:材料科學與工程學系

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