Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/43991
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dc.contributor.authorHuang, S.C.en_US
dc.contributor.author洪瑞華zh_TW
dc.contributor.authorShen, K.C.en_US
dc.contributor.authorWuu, D.S.en_US
dc.contributor.authorTu, P.M.en_US
dc.contributor.authorKuo, H.C.en_US
dc.contributor.authorTu, C.C.en_US
dc.contributor.authorHorng, R.H.en_US
dc.contributor.author武東星zh_TW
dc.date2011zh_TW
dc.date.accessioned2014-06-06T08:11:46Z-
dc.date.available2014-06-06T08:11:46Z-
dc.identifier.issn0021-8979zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/43991-
dc.description.abstractHigh performance 375 nm ultraviolet (UV) InGaN/AlGaN light-emitting diodes (LEDs) were demonstrated with inserting a heavy Si-doped GaN transition layer by metal-organic chemical vapor deposition. From transmission electron microcopy (TEM) image, the dislocation densities were significantly reduced due to the existence of the heavily Si-doping growth mode transition layer (GMTL), which results in residual stress relaxation and 3D growth. The internal quantum efficiency (IQE) of the LEDs with GMTL was measured by power-dependent photoluminescence (PL) to be 40.6% higher than ones without GMTL. The GMTL leads to the superior IQE performance of LEDs not only in decreasing carrier consumption at nonradiative recombination centers but also in partially mitigating the efficiency droop tendency. When the vertical-type LED chips (size: 1 mm x 1 mm) was driven with a 350 mA injection current, the output powers of the LEDs with and without GMTL were measured to be 286.7 and 204.2 mW, respectively. A 40.4% enhancement of light output power was achieved. Therefore, using the GMTL to reduce dislocations would be a promising prospective for InGaN/AlGaN UV-LEDs to achieve high IQE. (C) 2011 American Institute of Physics. [doi: 10.1063/1.3669377]en_US
dc.language.isoen_USzh_TW
dc.relationJournal of Applied Physicsen_US
dc.relation.ispartofseriesJournal of Applied Physics, Volume 110, Issue 12.en_US
dc.relation.urihttp://dx.doi.org/10.1063/1.3669377en_US
dc.subjectthreading dislocationsen_US
dc.subjectreductionen_US
dc.subjectmasksen_US
dc.subjectmovpeen_US
dc.titleStudy of 375 nm ultraviolet InGaN/AlGaN light-emitting diodes with heavily Si-doped GaN transition layer in growth mode, internal quantum efficiency, and device performanceen_US
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1063/1.3669377zh_TW
item.grantfulltextnone-
item.openairetypeJournal Article-
item.cerifentitytypePublications-
item.languageiso639-1en_US-
item.fulltextno fulltext-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
Appears in Collections:材料科學與工程學系
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