Please use this identifier to cite or link to this item:
|標題:||Defect reduction of laterally regrown GaN on GaN/patterned sapphire substrates||作者:||Wuu, D.S.
|關鍵字:||Defects;Etching;Metalorganic chemical vapor deposition;Nitrides;Patterned sapphire substrate;Light-emitting diodes;vapor-phase epitaxy;light-emitting-diodes;growth;leds||Project:||Journal of Crystal Growth||期刊/報告no：:||Journal of Crystal Growth, Volume 311, Issue 10, Page(s) 3063-3066.||摘要:||
Structural properties of GaN epilayers on wet-etched protruding and recess-patterned sapphire substrates (PSSs) have been investigated in detail using high-resolution double-crystal X-ray diffraction (DCXRD) and etch-pit density methods. The DCXRD results reveal various dislocation configurations on both types of PSSs. The etch pits of GaN on the recess PSS exhibit a regular distribution, i.e. less etch pits or threading dislocation density (TDD) onto the recess area than those onto the sapphire mesas. On the contrary, an irregular distribution is observed for the etch pits of GaN on the protruding PSS. A higher crystal quality of the GaN epilayer grown onto the recess PSS can be achieved as compared with that onto the protruding PSS. These data reflect that the GaN epilayer on the recess PSS could be a better template for the second epitaxial lateral overgrowth (ELOG) of GaN. As a result, the GaN epilayers after the ELOG process display the TDDs of around similar to 10(6) cm(-2). (C) 2009 Elsevier B.V. All rights reserved.
|Appears in Collections:||材料科學與工程學系|
Show full item record
TAIR Related Article
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.