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|標題:||Characterization of (Ba,Sr)TiO3 thin-film capacitors with Ir bottom electrodes and its improvement by plasma treatment||作者:||Wuu, D.S.
|關鍵字:||(Ba;Sr)TiO3;Ir;capacitor;high dielectric constant;leakage current;plasma materials-processing applications;memory;system;dram||Project:||Microelectronic Engineering||期刊/報告no：:||Microelectronic Engineering, Volume 66, Issue 1-4, Page(s) 600-607.||摘要:||
(Ba, Sr)TiO3 (BST) thin-film capacitors with Ir bottom electrodes are recognized to have higher polarization and leakage current as compared to those with conventional Pt electrodes. This paper describes a method to improve the leakage current of BST/Ir films by high-density plasma surface treatment using O-2 . N2O or NH3 gas in an inductively coupled plasma system. It is found that the leakage current density can be reduced by two orders of magnitude using O-2 plasma treatment. The dielectric constants were very closely to the reference sample except for NH3 plasma treated sample. The O-2 and N2O plasma can enhance the lifetime than 10 years at 1.2 V for the Pt/(Ba,Sr)TiO3/Ir capacitors. It is necessary to trade off the capacitance property for leakage current property. (C) 2002 Elsevier Science B.V. All rights reserved.
|Appears in Collections:||材料科學與工程學系|
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