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|標題:||Characterization of NH3 plasma-treated Ba0.7Sr0.3TiO3 thin films||作者:||Wuu, D.S.
|關鍵字:||leakage current;vlsi;(ba||Project:||Microelectronics Reliability||期刊/報告no：:||Microelectronics Reliability, Volume 40, Issue 4-5, Page(s) 663-666.||摘要:||
The effects of plasma surface treatment, using NH3 gas, of Ba0.7Sr0.3TiO3 (BST) films on the leakage and dielectric characteristics of a Pt/BST/Pt capacitor were investigated. As a result of the exposure of BST to the plasma, the leakage current density of the BST capacitor can be improved by three orders of magnitude as compared to that of the nonplasma-treated sample at an applied voltage of 1.5 V. Nevertheless, the surface morphology of BST was also changed by the NH3 plasma, as explored by atomic force microscopy. From the X-ray photoelectron spectroscopy examination, the existence of the N 1 s peak was observed in the plasma-treated sample. It induces the additional space charge and results in the reduction of the dielectric constant. (C) 2000 Elsevier Science Ltd. All rights reserved.
|Appears in Collections:||材料科學與工程學系|
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