Effects of fluorine-implanted treatment on Ba0.7Sr0.3TiO3 films

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Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/44038

標題:	Effects of fluorine-implanted treatment on Ba0.7Sr0.3TiO3 films
作者:	Horng, R.H. 洪瑞華 Wuu, D.S. Leu, C.C. Chan, S.H. Huang, T.Y. Sze, S.M. 武東星
關鍵字:	electrical-properties;thin-films;capacitors
Project:	Microelectronics Reliability
期刊/報告no：:	Microelectronics Reliability, Volume 40, Issue 4-5, Page(s) 667-670.
摘要:	The effects of F-ion implantation on the leakage and dielectric properties of the Ba0.7Sr0.3TiO3 (BST) films were investigated. The BST film implanted with 1 x 10(15) cm(-2) shows the optimum leakage performance. The leakage current density can be decreased by one order of magnitude as compared to that of the non-implanted sample at an applied voltage of 2 V. On increasing the implanted dose from 5 x 10(14) to 5 x 10(15) cm(-2), the dielectric constant first increases and then decreases due to the deteriorated crystallinity. It is found that the suitable F-ion dose can reduce the -OH contaminants and improve the dielectric and leakage properties. (C) 2000 Elsevier Science Ltd. All rights reserved.
URI:	http://hdl.handle.net/11455/44038
ISSN:	0026-2714
DOI:	10.1016/s0026-2714(99)00315-7
Appears in Collections:	材料科學與工程學系

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