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標題: High-power GaN light-emitting diodes with patterned copper substrates by electroplating
作者: Horng, R.H.
Lee, C.E.
Hsu, S.C.
Huang, S.H.
Wu, C.C.
Kung, C.Y.
Wuu, D.S.
關鍵字: laser-diodes;efficiency;contacts
Project: Physica Status Solidi a-Applied Research
期刊/報告no:: Physica Status Solidi a-Applied Research, Volume 201, Issue 12, Page(s) 2786-2790.
A high-power chip structure of GaN/mirror/Cu light-emitting diodes (LEDs) was developed by a combination of laser lift-off and electroplating techniques. Especially, the LED samples can be accomplished without additional scribing or dicing process. The luminance intensity of the GaN/mirror/Cu LED is about 50% higher than that of the original GaN/sapphire sample. The output power of the GaN/mirror/Cu LED increases linearly with injection current up to 180 mA, while early saturation of the GaN/sapphire device occurs at 70 mA. These indicate that the joule heating is less pronounced for the GaN/mirror/Cu LED sample where the metallic substrate provides a good heat sink.
ISSN: 0031-8965
DOI: 10.1002/pssa.200405091
Appears in Collections:材料科學與工程學系

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