Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/44047
標題: Vertical-conducting p-side-up GaN/mirror/Si light-emitting diodes by laser lift-off and wafer-transfer techniques
作者: Wuu, D.S.
洪瑞華
Hsu, S.C.
Huang, S.H.
Horng, R.H.
武東星
關鍵字: films;nm
Project: Physica Status Solidi a-Applied Research
期刊/報告no:: Physica Status Solidi a-Applied Research, Volume 201, Issue 12, Page(s) 2699-2703.
摘要: 
A p-side-up GaN/Ag/Au-Sn/Si light-emitting diode (LED) has been fabricated by a combination of laser lift-off and wafer-transfer techniques. The Ag/Au-Sn mirror structure was chosen to favor high optical reflectivity, low contact resistance with n-GaN, vertical conducting, and low-temperature (similar to300 degreesC) wafer bonding. The GaN/Ag/Au-Sn/Si LED presented a maximum luminance intensity of 129 mcd (@ 20 mA) with a forward voltage of 3.3 V. The luminance intensity is over two times in magnitude as compared with that of the original planar GaN/sapphire LED. Under high current injection, the GaN/Ag/Au-Sn/Si LED also showed a more stable emission wavelength. This feature is attributed to the Si substrate providing a good heat sink. (C) 2004 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
URI: http://hdl.handle.net/11455/44047
ISSN: 0031-8965
DOI: 10.1002/pssa.200405075
Appears in Collections:材料科學與工程學系

Show full item record
 

Google ScholarTM

Check

Altmetric

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.