Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/44055
標題: Fabrication of nc-Si/c-Si solar cells using hot-wire chemical vapor deposition and laser annealing
作者: Wu, B.R.
洪瑞華
Wuu, D.S.
Wan, M.S.
Huang, W.H.
Mao, H.Y.
Horng, R.H.
武東星
關鍵字: Silicon heterojunction solar cells;Hot-wire chemical vapor deposition;Laser annealing;Conversion efficiency;silicon;cvd
Project: Solar Energy Materials and Solar Cells
期刊/報告no:: Solar Energy Materials and Solar Cells, Volume 93, Issue 6-7, Page(s) 993-995.
摘要: 
In this paper, we present the performance of Si heterojunction solar cells prepared by hot-wire chemical vapor deposition and laser annealing. Under high hydrogen-dilution-ratio conditions, the crystallinity of the phosphorous-doped emitter layers was greatly improved due to hydrogen-induced crystallization. The grain boundary defects of the nano-crystalline emitter layer were further promoted using a laser (355 nm) crystallization technique. It was found that both the short-circuit current density and fill factor of the Si heterojunction solar cells were mainly dependent on the energy density of the laser beam. An efficiency of 14.2% is achieved for the n-nc-Si/p-c-Si heterojunction solar cell under a laser irradiation density of 382 mW/cm(2). (C) 2008 Elsevier B.V. All rights reserved.
URI: http://hdl.handle.net/11455/44055
ISSN: 0927-0248
DOI: 10.1016/j.solmat.2008.11.027
Appears in Collections:材料科學與工程學系

Show full item record
 

Google ScholarTM

Check

Altmetric

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.