Please use this identifier to cite or link to this item:
|標題:||Fabrication of nc-Si/c-Si solar cells using hot-wire chemical vapor deposition and laser annealing||作者:||Wu, B.R.
|關鍵字:||Silicon heterojunction solar cells;Hot-wire chemical vapor deposition;Laser annealing;Conversion efficiency;silicon;cvd||Project:||Solar Energy Materials and Solar Cells||期刊/報告no：:||Solar Energy Materials and Solar Cells, Volume 93, Issue 6-7, Page(s) 993-995.||摘要:||
In this paper, we present the performance of Si heterojunction solar cells prepared by hot-wire chemical vapor deposition and laser annealing. Under high hydrogen-dilution-ratio conditions, the crystallinity of the phosphorous-doped emitter layers was greatly improved due to hydrogen-induced crystallization. The grain boundary defects of the nano-crystalline emitter layer were further promoted using a laser (355 nm) crystallization technique. It was found that both the short-circuit current density and fill factor of the Si heterojunction solar cells were mainly dependent on the energy density of the laser beam. An efficiency of 14.2% is achieved for the n-nc-Si/p-c-Si heterojunction solar cell under a laser irradiation density of 382 mW/cm(2). (C) 2008 Elsevier B.V. All rights reserved.
|Appears in Collections:||材料科學與工程學系|
Show full item record
TAIR Related Article
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.