Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/44062
DC FieldValueLanguage
dc.contributor.authorHuang, P.H.en_US
dc.contributor.author林泓均zh_TW
dc.contributor.authorLin, H.en_US
dc.contributor.authorLin, Y.T.en_US
dc.date2006zh_TW
dc.date.accessioned2014-06-06T08:11:52Z-
dc.date.available2014-06-06T08:11:52Z-
dc.identifier.issn1057-7130zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/44062-
dc.description.abstractThis brief presents a simple reference circuit with channel-length modulation compensation to generate a reference voltage of 221 mV using subthreshold of MOSFETs at supply voltage of 0.85 V with power consumption of 3.3 mu W at room temperature using TSMC 0.18-mu m technology. The proposed circuit occupied in less than 0.0238 mm(2) achieves the reference voltage variation of 2 mV/V for supply voltage from 0.9 to 2.5 V and about 6 mV of temperature variation in the range from -20 degrees C to 120 degrees C. The agreement of simulation and measurement data is demonstrated.en_US
dc.language.isoen_USzh_TW
dc.relationIeee Transactions on Circuits and Systems Ii-Express Briefsen_US
dc.relation.ispartofseriesIeee Transactions on Circuits and Systems Ii-Express Briefs, Volume 53, Issue 9, Page(s) 882-885.en_US
dc.relation.urihttp://dx.doi.org/10.1109/tcsii.2006.881813en_US
dc.subjectcompensationen_US
dc.subjectchannel-length modulationen_US
dc.subjectreference voltageen_US
dc.subjectsubthresholden_US
dc.titleA simple subthreshold CMOS voltage reference circuit with channel-length modulation compensationen_US
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1109/tcsii.2006.881813zh_TW
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.openairetypeJournal Article-
item.cerifentitytypePublications-
item.fulltextno fulltext-
item.languageiso639-1en_US-
item.grantfulltextnone-
Appears in Collections:電機工程學系所
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