Please use this identifier to cite or link to this item:
|標題:||A research on the persistent photoconductivity behavior of GaN thin films deposited by r.f. magnetron sputtering||作者:||Horng, R.H.
|關鍵字:||persistent photoconductivity;sputtering;GaN||Project:||Thin Solid Films||期刊/報告no：:||Thin Solid Films, Volume 343, Page(s) 642-645.||摘要:||
The persistent photoconductivity (PPC) behavior has been characterized in sputtered GaN thin films using the room illumination with a wavelength of 254 nm under a 5-V bias. It was found that the N(2) partial pressure in the sputtering atmosphere has an evident effect on the PPC behavior. The obtained data show that the nitrogen vacancy is the candidate for PPC effect in the sputtered GaN film. At lower N(2) partial pressures, the nitrogen vacancy can be induced and resulted in GaN films with more donor levels as compared with those of samples deposited at higher N(2) contents. An energy band model that can account for the experimental observation of PPC behavior is proposed. (C) 1999 Elsevier Science S.A. All rights reserved.
|Appears in Collections:||材料科學與工程學系|
Show full item record
TAIR Related Article
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.