Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/44069
標題: A research on the persistent photoconductivity behavior of GaN thin films deposited by r.f. magnetron sputtering
作者: Horng, R.H.
洪瑞華
Wuu, D.S.
Wei, S.C.
Chan, S.H.
Kung, C.Y.
武東星
關鍵字: persistent photoconductivity;sputtering;GaN
Project: Thin Solid Films
期刊/報告no:: Thin Solid Films, Volume 343, Page(s) 642-645.
摘要: 
The persistent photoconductivity (PPC) behavior has been characterized in sputtered GaN thin films using the room illumination with a wavelength of 254 nm under a 5-V bias. It was found that the N(2) partial pressure in the sputtering atmosphere has an evident effect on the PPC behavior. The obtained data show that the nitrogen vacancy is the candidate for PPC effect in the sputtered GaN film. At lower N(2) partial pressures, the nitrogen vacancy can be induced and resulted in GaN films with more donor levels as compared with those of samples deposited at higher N(2) contents. An energy band model that can account for the experimental observation of PPC behavior is proposed. (C) 1999 Elsevier Science S.A. All rights reserved.
URI: http://hdl.handle.net/11455/44069
ISSN: 0040-6090
DOI: 10.1016/s0040-6090(98)01666-6
Appears in Collections:材料科學與工程學系

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