Please use this identifier to cite or link to this item:
標題: Characterization of sputtered Ta-Ru thin films for ink-jet heater applications
作者: Wuu, D.S.
Chan, C.C.
Horng, R.H.
關鍵字: tantalum;ruthenium;resistivity;oxidation;sputtering;printhead
Project: Thin Solid Films
期刊/報告no:: Thin Solid Films, Volume 373, Issue 1-2, Page(s) 84-88.
This paper discusses several structural, electrical and oxidation characteristics of co-sputtered Ta-Ru alloy films on oxidized Si substrates. From X-ray examination, the Ta1Ru1 phase has formed and dominates in the compositions exceeding 54 at.% Ru content. The resistivity of the Ta-Ru thin films can reach a maximum of similar to 320 mu Omega -cm in the composition range between 35 and 54 at.% Ru. After thermal treatment in air (600 degreesC 1 h), Ru-rich samples show a lesser increase in resistivity than Ta-rich ones. The observed preferential oxidation of Ta in the Ta-Ru samples can be further interpreted by thermodynamic calculations. The Ta-rich surface oxide is believed to be responsible for the passivating ability of the Ru atom towards oxidation at high temperatures. This results in the Ru of the metallic state although the oxidation of Ta occurs. Finally, the Ta-Ru thin films without any additional passivation were fabricated in heater arrays to perform the ink-jet lifetime test. A lifetime over 1 x 10(7) driving pulses can be achieved, which indicates Ta-Ru has high potential in thermal ink-jet applications. (C) 2000 Elsevier Science S.A. All rights reserved.
ISSN: 0040-6090
DOI: 10.1016/s0040-6090(00)01098-1
Appears in Collections:材料科學與工程學系

Show full item record

Google ScholarTM




Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.