Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/44073
標題: Enhanced p-Channel Metal-Oxide-Semiconductor Field-Effect Transistor Charge Pump for Low-Voltage Applications
作者: Hsu, C.P.
林泓均
Wu, H.M.
Lin, H.C.
關鍵字: efficiency;circuits
Project: Japanese Journal of Applied Physics
期刊/報告no:: Japanese Journal of Applied Physics, Volume 49, Issue 4.
摘要: 
In this paper, a power-efficient two-phase p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) charge pump with two auxiliary clocks to boost the gate biases of the switching transistors is proposed for low-voltage applications. It can increase overdrive voltages of the switching transistors, preserve low voltage drops within the transistors, and work well at a reduced supply voltage. Simulation results show that the proposed two-stage charge pump improves the voltage gain by more than 30% for 0.35 mu m complementary metal-oxide-semiconductor (CMOS) field-effect transistor (FET) technology and improves the maximum power efficiency by 40% for 0.18 mu m CMOS technology in comparison with Racape and Daga's charge pump. Measurement results show that the voltage gains of the proposed two-stage charge pump are more than 95.7 and 92% at supply voltages higher than 1.4 and 0.7 V for 0.35 and 0.18 mu m CMOS technologies, respectively. A compact model of power efficiency for the proposed charge pump is derived and verified by simulations and measurements. Results show that the power efficiency can be approximately 60% at low supply voltages. (C) 2010 The Japan Society of Applied Physics
URI: http://hdl.handle.net/11455/44073
ISSN: 0021-4922
DOI: 10.1143/jjap.49.04de16
Appears in Collections:電機工程學系所

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