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|標題:||Enhanced p-Channel Metal-Oxide-Semiconductor Field-Effect Transistor Charge Pump for Low-Voltage Applications||作者:||Hsu, C.P.
|關鍵字:||efficiency;circuits||Project:||Japanese Journal of Applied Physics||期刊/報告no：:||Japanese Journal of Applied Physics, Volume 49, Issue 4.||摘要:||
In this paper, a power-efficient two-phase p-channel metal-oxide-semiconductor field-effect transistor (PMOSFET) charge pump with two auxiliary clocks to boost the gate biases of the switching transistors is proposed for low-voltage applications. It can increase overdrive voltages of the switching transistors, preserve low voltage drops within the transistors, and work well at a reduced supply voltage. Simulation results show that the proposed two-stage charge pump improves the voltage gain by more than 30% for 0.35 mu m complementary metal-oxide-semiconductor (CMOS) field-effect transistor (FET) technology and improves the maximum power efficiency by 40% for 0.18 mu m CMOS technology in comparison with Racape and Daga's charge pump. Measurement results show that the voltage gains of the proposed two-stage charge pump are more than 95.7 and 92% at supply voltages higher than 1.4 and 0.7 V for 0.35 and 0.18 mu m CMOS technologies, respectively. A compact model of power efficiency for the proposed charge pump is derived and verified by simulations and measurements. Results show that the power efficiency can be approximately 60% at low supply voltages. (C) 2010 The Japan Society of Applied Physics
|Appears in Collections:||電機工程學系所|
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