Please use this identifier to cite or link to this item:
標題: Effects of plasma pretreatment on silicon nitride barrier films on polycarbonate substrates
作者: Chen, T.N.
Wuu, D.S.
Wu, C.C.
Chiang, C.C.
Lin, H.B.
Chen, Y.P.
Horng, R.H.
關鍵字: silicon nitride;polycarbonate;plasma treatment;permeation;chemical-vapor-deposition;light-emitting devices;dual-frequency;plasma;improved adhesion;coatings;polymers;surface;diffusion;growth
Project: Thin Solid Films
期刊/報告no:: Thin Solid Films, Volume 514, Issue 1-2, Page(s) 188-192.
Silicon nitride (SiNx) films deposited on Ar, N-2, and O-2 plasma-treated polycarbonate (PC) substrates have been investigated for transparent barrier applications. The details on different gas effects on PC surface and SiNx/PC properties were investigated in terms of the contact angle, free energy, roughness, adhesion, transmittance, water vapor transmission rate ( WVTR) and oxygen transmission rate (OTR). It was found that both Ar and N-2 plasma could improve the adhesion between SiNx films and PC substrates. When the roughness of plasma-treated PC substrates was decreased from 1.71 nm to 0.89 nm, the OTR data of SiNx/PC samples after 6000 times bending test was decreased from 0.61 to 0.1 cm(3)/m(2)/day. Moreover, the transmittance and permeation results of SiN,/PC plasma-treated samples also show great dependence. After Ar plasma treatment for 60 s, the WVTR and OTR of the 50-nm-thick SiNx barrier coating on PC substrate after 6000 times bending test can decrease to a value of near 0.01 g/m(2)/day and 0.1 cm(3)/m(2)/day, respectively. This result indicates that the SiNx films on Ar plasma-treated PC substrates have high potential for flexible organic light-emitting diode applications. (c) 2006 Elsevier B.V All rights reserved.
ISSN: 0040-6090
DOI: 10.1016/j.tsf.2006.02.039
Appears in Collections:材料科學與工程學系

Show full item record

Google ScholarTM




Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.