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標題: | Effects of plasma pretreatment on silicon nitride barrier films on polycarbonate substrates | 作者: | Chen, T.N. 洪瑞華 Wuu, D.S. Wu, C.C. Chiang, C.C. Lin, H.B. Chen, Y.P. Horng, R.H. 武東星 |
關鍵字: | silicon nitride;polycarbonate;plasma treatment;permeation;chemical-vapor-deposition;light-emitting devices;dual-frequency;plasma;improved adhesion;coatings;polymers;surface;diffusion;growth | Project: | Thin Solid Films | 期刊/報告no:: | Thin Solid Films, Volume 514, Issue 1-2, Page(s) 188-192. | 摘要: | Silicon nitride (SiNx) films deposited on Ar, N-2, and O-2 plasma-treated polycarbonate (PC) substrates have been investigated for transparent barrier applications. The details on different gas effects on PC surface and SiNx/PC properties were investigated in terms of the contact angle, free energy, roughness, adhesion, transmittance, water vapor transmission rate ( WVTR) and oxygen transmission rate (OTR). It was found that both Ar and N-2 plasma could improve the adhesion between SiNx films and PC substrates. When the roughness of plasma-treated PC substrates was decreased from 1.71 nm to 0.89 nm, the OTR data of SiNx/PC samples after 6000 times bending test was decreased from 0.61 to 0.1 cm(3)/m(2)/day. Moreover, the transmittance and permeation results of SiN,/PC plasma-treated samples also show great dependence. After Ar plasma treatment for 60 s, the WVTR and OTR of the 50-nm-thick SiNx barrier coating on PC substrate after 6000 times bending test can decrease to a value of near 0.01 g/m(2)/day and 0.1 cm(3)/m(2)/day, respectively. This result indicates that the SiNx films on Ar plasma-treated PC substrates have high potential for flexible organic light-emitting diode applications. (c) 2006 Elsevier B.V All rights reserved. |
URI: | http://hdl.handle.net/11455/44078 | ISSN: | 0040-6090 | DOI: | 10.1016/j.tsf.2006.02.039 |
Appears in Collections: | 材料科學與工程學系 |
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