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|標題:||Deposition and characterization of ultra-high barrier coatings for flexible electronic applications||作者:||Chen, T.N.
|關鍵字:||Barrier coatings;Film stress;Multilayer structure;PECVD;Flexible;electronics;films;permeation||Project:||Vacuum||期刊/報告no：:||Vacuum, Volume 84, Issue 12, Page(s) 1444-1447.||摘要:||
A barrier structure consisting of SiO(x) and SiN(x) films was deposited on the polymer substrate at 80 degrees C via plasma-enhanced chemical vapor deposition (PECVD). However, the low radius of curvature (R(c)) of the barrier-coated substrate may cause the inconvenience of the following fabrication processes. By depositing a 150 nm-SiN(x) film, the R(c) of the barrier-coated polycarbonate (PC) substrate can increase from 80 to 115 mm without inducing any cracks in the barrier structure. Furthermore, the thermal stress of the barrier structure can be adjusted via extending the PECVD process duration in the chamber and replacing PC by the polyethersulone (PES) substrate. The R(c) can increase to similar to 356 mm by depositing the 150 nm-SiN(x) film on the other side of the PES substrate. Finally, the calcium test result of the barrier films/PES/SiN(x) sample was calculated to be around 3.05 x 10(-6) g/m(2)/day, representing that the barrier structure did not fail after modification. (C) 2009 Elsevier Ltd. All rights reserved.
|Appears in Collections:||材料科學與工程學系|
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