Please use this identifier to cite or link to this item:
|標題:||Thermal stability improvement of vertical conducting green resonant-cavity light-emitting diodes on copper substrates||作者:||Huang, S.Y.
|關鍵字:||InGaN;junction temperature;laser lift-off (LLO);resonant-cavity;light-emitting diode (RCLED);molecular-beam epitaxy;mirrors||Project:||Ieee Photonics Technology Letters||期刊/報告no：:||Ieee Photonics Technology Letters, Volume 20, Issue 9-12, Page(s) 797-799.||摘要:||
Green light vertical-conducting resonant-cavity light-emitting diodes.(RCLEDs) have been fabricated on a Cu substrate by the combination of laser lift-off and plating techniques. The structure of the RCLED/Cu is consisted of the InGaN-GaN multiple-quantum-well active layer between three layers of the dielectric TiO2-SiO2 distributed Bragg reflector as a top mirror and an Al metal layer as a bottom mirror. It was found that the RCLED with Cu substrate presents superior thermal dissipation and a stable electroluminescence emission peak wavelength (similar to 507 nm) under a high injection current. It is attributed to the Cu substrate providing a good heat sink and effectively reducing the junction temperature.
|Appears in Collections:||材料科學與工程學系|
Show full item record
TAIR Related Article
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.