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標題: Thermal stability improvement of vertical conducting green resonant-cavity light-emitting diodes on copper substrates
作者: Huang, S.Y.
Horng, R.H.
Liu, P.L.
Wu, J.Y.
Wu, H.W.
Wuu, D.S.
關鍵字: InGaN;junction temperature;laser lift-off (LLO);resonant-cavity;light-emitting diode (RCLED);molecular-beam epitaxy;mirrors
Project: Ieee Photonics Technology Letters
期刊/報告no:: Ieee Photonics Technology Letters, Volume 20, Issue 9-12, Page(s) 797-799.
Green light vertical-conducting resonant-cavity light-emitting diodes.(RCLEDs) have been fabricated on a Cu substrate by the combination of laser lift-off and plating techniques. The structure of the RCLED/Cu is consisted of the InGaN-GaN multiple-quantum-well active layer between three layers of the dielectric TiO2-SiO2 distributed Bragg reflector as a top mirror and an Al metal layer as a bottom mirror. It was found that the RCLED with Cu substrate presents superior thermal dissipation and a stable electroluminescence emission peak wavelength (similar to 507 nm) under a high injection current. It is attributed to the Cu substrate providing a good heat sink and effectively reducing the junction temperature.
ISSN: 1041-1135
DOI: 10.1109/lpt.2008.921120
Appears in Collections:材料科學與工程學系

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