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|標題:||Phase separation phenomenon in MOCVD-grown GaInP epitaxial layers||作者:||Tsai, Y.L.
|關鍵字:||Stresses;X-ray diffraction;Metalorganic chemical vapor deposition;GaInP;lattice mismatch;crystals||Project:||Journal of Crystal Growth||期刊/報告no：:||Journal of Crystal Growth, Volume 311, Issue 11, Page(s) 3220-3224.||摘要:||
In-rich and Ga-rich GaInP films were intentionally grown on (0 0 1) GaAs substrates by low-pressure MOCVD to investigate the effect of lattice strain on composition. High-resolution X-ray diffraction (HRXRD) measurement showed that a GaInP single layer exhibits a double-diffracted peak phenomenon. Such a double peak represents a composition separation in the grown film, resulting in two absorption cutoff energies in optical absorption analysis. Cross-sectional transmission electron microscopic (TEM) observation confirmed the composition separation in an In-rich GaInP film. Furthermore, the composition separation amount of a Ga-rich GaInP film after substrate removal was found to be similar to 0.5%, which reflects the actual effect of lattice strain on composition during growth stage. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved.
|Appears in Collections:||材料科學與工程學系|
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