Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/44102
DC FieldValueLanguage
dc.contributor.authorTsai, Y.L.en_US
dc.contributor.author洪瑞華zh_TW
dc.contributor.authorHorng, R.H.en_US
dc.contributor.authorTseng, M.C.en_US
dc.contributor.authorKuo, C.H.en_US
dc.contributor.authorLiu, P.L.en_US
dc.contributor.authorWuu, D.S.en_US
dc.contributor.authorLin, D.Y.en_US
dc.contributor.author武東星zh_TW
dc.contributor.author劉柏良zh_TW
dc.date2009zh_TW
dc.date.accessioned2014-06-06T08:11:54Z-
dc.date.available2014-06-06T08:11:54Z-
dc.identifier.issn0022-0248zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/44102-
dc.description.abstractIn-rich and Ga-rich GaInP films were intentionally grown on (0 0 1) GaAs substrates by low-pressure MOCVD to investigate the effect of lattice strain on composition. High-resolution X-ray diffraction (HRXRD) measurement showed that a GaInP single layer exhibits a double-diffracted peak phenomenon. Such a double peak represents a composition separation in the grown film, resulting in two absorption cutoff energies in optical absorption analysis. Cross-sectional transmission electron microscopic (TEM) observation confirmed the composition separation in an In-rich GaInP film. Furthermore, the composition separation amount of a Ga-rich GaInP film after substrate removal was found to be similar to 0.5%, which reflects the actual effect of lattice strain on composition during growth stage. Crown Copyright (C) 2009 Published by Elsevier B.V. All rights reserved.en_US
dc.language.isoen_USzh_TW
dc.relationJournal of Crystal Growthen_US
dc.relation.ispartofseriesJournal of Crystal Growth, Volume 311, Issue 11, Page(s) 3220-3224.en_US
dc.relation.urihttp://dx.doi.org/10.1016/j.jcrysgro.2009.03.028en_US
dc.subjectStressesen_US
dc.subjectX-ray diffractionen_US
dc.subjectMetalorganic chemical vapor depositionen_US
dc.subjectGaInPen_US
dc.subjectlattice mismatchen_US
dc.subjectcrystalsen_US
dc.titlePhase separation phenomenon in MOCVD-grown GaInP epitaxial layersen_US
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1016/j.jcrysgro.2009.03.028zh_TW
item.languageiso639-1en_US-
item.grantfulltextnone-
item.cerifentitytypePublications-
item.fulltextno fulltext-
item.openairetypeJournal Article-
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
Appears in Collections:材料科學與工程學系
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