Phosphor-free white light from InGaN blue and green light-emitting diode chips covered with semiconductor-conversion AlGaInP epilayer

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Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/44110

標題:	Phosphor-free white light from InGaN blue and green light-emitting diode chips covered with semiconductor-conversion AlGaInP epilayer
作者:	Horng, R.H. 洪瑞華 Han, P. Wuu, D.S. 武東星韓斌
關鍵字:	AlGaInP;chromaticity coordinates;correlated color temperature;InGaN;light-emitting diode (LED);phosphor-free white lamp;illumination
Project:	Ieee Photonics Technology Letters
期刊/報告no：:	Ieee Photonics Technology Letters, Volume 20, Issue 13-16, Page(s) 1139-1141.
摘要:	A phosphor-free white lamp was fabricated using the InGaN-based blue and green light-emitting diode (LED) chips covered with semiconductor-conversion layer AlGaInP. The lamp can provide three bands: a 460-nm blue emission coming from the blue LED, a 555-nm green emission coming from the green LED, and 630-nm red emission coming from the excited AlGaInP epilayer. As 50 mA was injected into the white lamp at room temperature, the chromaticity coordinates and correlated color temperature (T(C)) are (0.338, 0.335) and 5348 K, respectively. By separating injection current into blue and green LED chips, T(C) of lamp can be tuned from about 4000 K to 5400 K.
URI:	http://hdl.handle.net/11455/44110
ISSN:	1041-1135
DOI:	10.1109/lpt.2008.924882
Appears in Collections:	材料科學與工程學系

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