Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/44113
標題: Characteristics of flip-chip InGaN-based light-emitting diodes on patterned sapphire substrates
作者: Wang, W.K.
洪瑞華
Wuu, D.S.
Lin, S.H.
Huang, S.Y.
Han, P.
Horng, R.H.
武東星
韓 斌
關鍵字: inGaN;light-emitting diode;patterned sapphire substrate;flip chip;near-ultraviolet
Project: Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers
期刊/報告no:: Japanese Journal of Applied Physics Part 1-Regular Papers Brief Communications & Review Papers, Volume 45, Issue 4B, Page(s) 3430-3432.
摘要: 
We report on the characteristics of high-power near-ultraviolet (425 nm) flip-chip InGaN light-emitting diodes (LEDs) fabricated onto a patterned sapphire substrate (PSS). When the PSS flip-chip LED (chip size: 1 mm(2)) operated at a 20 mA forward current at room temperature, the forward voltage and the light output power were 3.15 V and 6.8 mW, respectively. It was found that the PSS flip-chip LED has similar current-voltage characteristics to those of a conventional flip-chip LED. The luminance intensity of the PSS flip-chip LED was approximately 43% lager than that of the conventional flip-chip LED (at 100 mA). Moreover, the light output power was greatly increased by 59% for the PSS sample at a forward injection current of 350 mA compared with that of the conventional flip-chip LED. This result was attributed to the increase in the probability of photons escaping from the LED samples, resulting in the enhancement of light extraction efficiency. The effect of the PSS on the flip-chip LED structure has been simulated and shows a good correlation with the measured results.
URI: http://hdl.handle.net/11455/44113
ISSN: 0021-4922
DOI: 10.1143/jjap.45.3430
Appears in Collections:材料科學與工程學系

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