Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/44118
標題: Power-enhanced ITO omni-directional reflective AlGaInP LEDs by two-dimensional wavelike surface texturing
作者: Hsu, S.C.
洪瑞華
Wuu, D.S.
Zheng, X.H.
Su, J.Y.
Kuo, M.F.
Han, P.
Horng, R.H.
武東星
韓 斌
關鍵字: light-emitting-diodes;external quantum efficiency;extraction
Project: Semiconductor Science and Technology
期刊/報告no:: Semiconductor Science and Technology, Volume 23, Issue 10.
摘要: 
An n-side up-type AlGaInP multiple-quantum-well light-emitting diode (LED) has been developed by texturing the current spreading layer utilizing photolithography followed by an anisotropic etching process over n-AlGaInP grown by metalorganic chemical vapor deposition. The GaP-ITO-Ag omni-directional reflective LEDs with the wavelike textured surfaces provide a reasonable improvement in light output power and efficiency over the corresponding conventional structures. The luminous intensity of the surface-textured LED is 1.46 times greater than that of the conventional LED in the normal direction. The output power (at 350 mA) of the surface-textured LED is increased approximately 40% as compared with that of the conventional LED. Additionally, the optical simulation also presents a tendency towards the ray extraction ratio as the size of the wavelike hole changes, confirming a proper formation of pattern size associated with the fabrication process.
URI: http://hdl.handle.net/11455/44118
ISSN: 0268-1242
DOI: 10.1088/0268-1242/23/10/105013
Appears in Collections:材料科學與工程學系

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