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|標題:||Power-enhanced ITO omni-directional reflective AlGaInP LEDs by two-dimensional wavelike surface texturing||作者:||Hsu, S.C.
|關鍵字:||light-emitting-diodes;external quantum efficiency;extraction||Project:||Semiconductor Science and Technology||期刊/報告no：:||Semiconductor Science and Technology, Volume 23, Issue 10.||摘要:||
An n-side up-type AlGaInP multiple-quantum-well light-emitting diode (LED) has been developed by texturing the current spreading layer utilizing photolithography followed by an anisotropic etching process over n-AlGaInP grown by metalorganic chemical vapor deposition. The GaP-ITO-Ag omni-directional reflective LEDs with the wavelike textured surfaces provide a reasonable improvement in light output power and efficiency over the corresponding conventional structures. The luminous intensity of the surface-textured LED is 1.46 times greater than that of the conventional LED in the normal direction. The output power (at 350 mA) of the surface-textured LED is increased approximately 40% as compared with that of the conventional LED. Additionally, the optical simulation also presents a tendency towards the ray extraction ratio as the size of the wavelike hole changes, confirming a proper formation of pattern size associated with the fabrication process.
|Appears in Collections:||材料科學與工程學系|
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