Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/44121
標題: Chemical-Mechanical Lift-Off Process for InGaN Epitaxial Layers
作者: Lin, M.S.
張守一
Lin, C.F.
Huang, W.C.
Wang, G.M.
Shieh, B.C.
Dai, J.J.
Chang, S.Y.
Wuu, D.S.
Liu, P.L.
Horng, R.H.
洪瑞華
武東星
林佳鋒
Project: Applied Physics Express
期刊/報告no:: Applied Physics Express, Volume 4, Issue 6.
摘要: 
An InGaN-based light-emitting diode (LED) structure was separated from a GaN/sapphire structure by inserting sacrificial Si-doped InGaN/GaN superlattice layers through a chemical-mechanical lift-off (CMLO) process. The CMLO process consisted of a band-gap-selective photoelectrochemical lateral wet etching process and a mechanical lift-off process. A lower elastic modulus and hardness of the lateral-etched LED structure were measured compared with the conventional LED structure, which indicated a weak mechanical property of the treated LED structure. The photoluminescence blue-shift phenomenon and the Raman redshift phenomenon indicated that the compressive strain from the bottom GaN/sapphire structure was released through the CMLO process. (C) 2011 The Japan Society of Applied Physics
URI: http://hdl.handle.net/11455/44121
ISSN: 1882-0778
DOI: 10.1143/apex.4.062101
Appears in Collections:材料科學與工程學系

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