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|標題:||Chemical-Mechanical Lift-Off Process for InGaN Epitaxial Layers||作者:||Lin, M.S.
|Project:||Applied Physics Express||期刊/報告no：:||Applied Physics Express, Volume 4, Issue 6.||摘要:||
An InGaN-based light-emitting diode (LED) structure was separated from a GaN/sapphire structure by inserting sacrificial Si-doped InGaN/GaN superlattice layers through a chemical-mechanical lift-off (CMLO) process. The CMLO process consisted of a band-gap-selective photoelectrochemical lateral wet etching process and a mechanical lift-off process. A lower elastic modulus and hardness of the lateral-etched LED structure were measured compared with the conventional LED structure, which indicated a weak mechanical property of the treated LED structure. The photoluminescence blue-shift phenomenon and the Raman redshift phenomenon indicated that the compressive strain from the bottom GaN/sapphire structure was released through the CMLO process. (C) 2011 The Japan Society of Applied Physics
|Appears in Collections:||材料科學與工程學系|
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