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標題: InGaN-based Light-Emitting Diodes with a Sawtooth-shaped Sidewall on Sapphire Substrate
作者: Lin, Chun-Min
Lin, Chia-Feng
Shieh, Bing-Cheng
Yu, Tzu-Yun
Chen, Sih-Han
Tsai, Peng-Han
Chen, Kuei-Ting
Dai, Jing-Jie
Tsai, Tzong-Liang
關鍵字: InGaN;laser scribing/drilling process;sawtooth-shaped sidewall structure
Project: IEEE Photonics Technology Letters, Volume 24, Issue 13, Page(s) 1133 - 1135.
An InGaN light emitting diode (LED) with a
cone-shaped GaN structure and a sawtooth-shaped sapphire sidewall
structure was fabricated through a laser-drilling process. The
fabricated procedures consisted of a laser scribing/drilling process, a
wet etching process, and a chip cleaving process. In the treated LED
structure with the laser-drilling sawtooth-shaped sidewall, the light
output power had a 16% enhancement compared to a conventional
LED structure with a laser-scribing sidewall. A periodic high light
emission intensity, with a 2.6μm-width spaced at regular intervals of
3.8μm, was observed on the treated LED sidewall structure
corresponding to the laser-drilling patterns. The LED structure
consists of a laser-drilling sidewall and a cone-shaped GaN structure
that increases the light extraction efficiency for high efficiency InGaN
LED applications.
DOI: 10.1109/LPT.2012.2196511
Appears in Collections:材料科學與工程學系

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