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|標題:||Solution-processed Li–Al layered-doublehydroxide platelet structures for high efficiency InGaN light emitting diodes||作者:||Lin, Chia-Feng
|Project:||Optics Express, Volume 20, Issue S5, page(s) A669-A677.||摘要:||
High-oriented Li–Al layered double hydroxide (LDH) films
were grown on an InGaN light-emitting diode (LED) structures by
immersing in an aqueous alkaline Al3+- and Li+-containing solution. The
stand upward and adjacent Li-Al LDH platelet structure was formed on the
LED structure as a textured film to increase the light extraction efficiency.
The light output power of the LED structure with the Li-Al LDH platelet
structure had a 31% enhancement compared with a conventional LED
structure at 20 mA. The reverse leakage currents, at -5V, were measured at -
2.3×10-8A and -1.0×10-10A for the LED structures without and with the
LDH film that indicated the Li-Al LDH film had the insulated property
acted a passivation layer that had potential to replace the conventional SiO2
and Si3N4 passivation layers. The Li-Al LDH layer had the textured platelet
structure and the insulated property covering whole the LED surface that
has potential for high efficiency InGaN LED applications.
|Appears in Collections:||材料科學與工程學系|
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