Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/44192
標題: Solution-processed Li–Al layered-doublehydroxide platelet structures for high efficiency InGaN light emitting diodes
作者: Lin, Chia-Feng
Tsai, Peng-Han
Lin, Zhi-Yu
Uan, Jun-Yen
Lin, Chun-Min
Yang, Chung-Chieh
Shieh, Bing-Cheng
Project: Optics Express, Volume 20, Issue S5, page(s) A669-A677.
摘要: 
High-oriented Li–Al layered double hydroxide (LDH) films
were grown on an InGaN light-emitting diode (LED) structures by
immersing in an aqueous alkaline Al3+- and Li+-containing solution. The
stand upward and adjacent Li-Al LDH platelet structure was formed on the
LED structure as a textured film to increase the light extraction efficiency.
The light output power of the LED structure with the Li-Al LDH platelet
structure had a 31% enhancement compared with a conventional LED
structure at 20 mA. The reverse leakage currents, at -5V, were measured at -
2.3×10-8A and -1.0×10-10A for the LED structures without and with the
LDH film that indicated the Li-Al LDH film had the insulated property
acted a passivation layer that had potential to replace the conventional SiO2
and Si3N4 passivation layers. The Li-Al LDH layer had the textured platelet
structure and the insulated property covering whole the LED surface that
has potential for high efficiency InGaN LED applications.
URI: http://hdl.handle.net/11455/44192
DOI: 10.1364/OE.20.00A669
Appears in Collections:材料科學與工程學系

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