Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/44236
標題: (Appl.Phys.Lett.,90:032904-032906)Epitaxial growth of BaTiO3 films on TiN/Si substrates by a hydrothermal-galvanic couple method
作者: Y.C.Chieh
C.C.Yu
F.H.Lu
關鍵字: barium compounds;epitaxial layers;dielectric thin films;liquid phase epitaxial growth
出版社: USA:American Institute of Physics
Project: Appl.Phys.Lett.,90:032904-032906
URI: http://hdl.handle.net/11455/44236
Appears in Collections:材料科學與工程學系

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