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|標題:||High Turn Ratio and High Coupling Coefficient Transformer in 90-nm CMOS Technology||作者:||Hsu, H.M.
|關鍵字:||Coupling factor;multistack transformer;turn ratio;on-chip transformers;monolithic transformers;silicon;design||Project:||Ieee Electron Device Letters||期刊/報告no：:||Ieee Electron Device Letters, Volume 30, Issue 5, Page(s) 535-537.||摘要:||
A novel layout of IC transformer is proposed to achieve both high turn ratio and coupling coefficient in this letter. Two groups of proposed devices are designed to maintain identical self-inductances in the transformer's primary and secondary coils. A total of six devices are fabricated in foundry 90-nm CMOS technology. Using the nine and five metal layers in the primary and secondary coils in a specific layout, measurement results show that the proposed transformer simultaneously achieves high turn ratio and coupling coefficient with values of 1.9 and 0.89, respectively, in a 92-mu m outer dimension.
|Appears in Collections:||電機工程學系所|
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