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|標題:||High-Q Transformers in Copper-Interconnection CMOS Technology||作者:||Hsu, H.M.
|關鍵字:||Aluminum-pad;copper-interconnection;on-chip transformer;Q value;silicon-based;stack layout;integrated-circuits;inductors;rf;design;ics||Project:||Ieee Transactions on Components and Packaging Technologies||期刊/報告no：:||Ieee Transactions on Components and Packaging Technologies, Volume 32, Issue 3, Page(s) 578-584.||摘要:||
This paper proposes the adoption of aluminum-pad (AL-pad) film to improve the performance of on-chip transformers using current CMOS technology. Two devices proposed in this paper use an AL-pad film, without adding extra process, to enhance the Q value and bandwidth in the copper-interconnection process. The first device changes the transformer's coil location to increase the peak Q value and operation bandwidth, and the second device alters the coil material to improve the Q value in the entire operating band. A foundry 0.13-mu m CMOS technology is fabricated the proposed transformers. The measurement results demonstrate that the first proposed device improves the peak Q value and operation bandwidth with the values of 32.5% and 22.6%, respectively. Afterward, the second proposed device increases the peak Q value 44.7% more than the standard device.
|Appears in Collections:||電機工程學系所|
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