Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/44405
標題: High-Q Transformers in Copper-Interconnection CMOS Technology
作者: Hsu, H.M.
許恒銘
Chien, H.C.
關鍵字: Aluminum-pad;copper-interconnection;on-chip transformer;Q value;silicon-based;stack layout;integrated-circuits;inductors;rf;design;ics
Project: Ieee Transactions on Components and Packaging Technologies
期刊/報告no:: Ieee Transactions on Components and Packaging Technologies, Volume 32, Issue 3, Page(s) 578-584.
摘要: 
This paper proposes the adoption of aluminum-pad (AL-pad) film to improve the performance of on-chip transformers using current CMOS technology. Two devices proposed in this paper use an AL-pad film, without adding extra process, to enhance the Q value and bandwidth in the copper-interconnection process. The first device changes the transformer's coil location to increase the peak Q value and operation bandwidth, and the second device alters the coil material to improve the Q value in the entire operating band. A foundry 0.13-mu m CMOS technology is fabricated the proposed transformers. The measurement results demonstrate that the first proposed device improves the peak Q value and operation bandwidth with the values of 32.5% and 22.6%, respectively. Afterward, the second proposed device increases the peak Q value 44.7% more than the standard device.
URI: http://hdl.handle.net/11455/44405
ISSN: 1521-3331
DOI: 10.1109/tcapt.2008.2009226
Appears in Collections:電機工程學系所

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