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標題: Compact Layout of On-Chip Transformer
作者: Hsu, H.M.
Lai, S.H.
Hsu, C.J.
關鍵字: Coupling factor;geometry mean distance;on-chip transformer;turn ratio;high turn ratio;monolithic transformers;silicon;design;technology;inductors
Project: Ieee Transactions on Electron Devices
期刊/報告no:: Ieee Transactions on Electron Devices, Volume 57, Issue 5, Page(s) 1076-1083.
This study develops a compact layout for an on-chip transformer with both wide range of turn ratios and a high coupling coefficient in a small chip area. Analytical formulas are applied to calculate the self-inductances in the design stage. Therefore, six devices with various turn ratios are designed to verify the proposed layout. All devices are fabricated using foundry 130 nm complementary metal-oxide semiconductor technology. Measurements reveal that the proposed transformer has a wide range of n values (1-5.68) and high coupling k values (0.99-0.48) for a chip area of 1002 mu m(2).
ISSN: 0018-9383
DOI: 10.1109/ted.2010.2044280
Appears in Collections:電機工程學系所

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