Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/44584
標題: Luminescence properties of wurtzite AlN nanotips
作者: Shi, S.C.
薛特
Chen, C.F.
Chattopadhyay, S.
Chen, K.H.
Ke, B.W.
Chen, L.C.
Trinkler, L.
Berzina, B.
陳貴賢
關鍵字: band-edge cathodoluminescence;aluminum nitride nanotips;oxygen-related;defects;sapphire substrate;optical-properties;single-crystals;transitions;growth;films
Project: Applied Physics Letters
期刊/報告no:: Applied Physics Letters, Volume 89, Issue 16.
摘要: 
The optical properties of aluminum nitride nanotips (AlNNTs) synthesized via vapor transport and condensation process have been studied by cathodoluminescence, photoluminescence (PL), thermoluminescence (TL), and UV absorption measurements. Two defect related transitions around 2.1 and 3.4 eV and an excitonic feature at 6.2 eV were identified. Compared to the AlN macropowders, the AlNNTs showed a blueshift (+0.2 eV) of the similar to 3.2 eV peak. Analysis of both PL and TL excitation measurements indicated the existence of subband gap multiple energy levels in AlNNTs. A significant TL intensity even at 145 degrees C suggests possible ultraviolet detector and dosimetric applications of these AlNNTs. (c) 2006 American Institute of Physics.
URI: http://hdl.handle.net/11455/44584
ISSN: 0003-6951
DOI: 10.1063/1.2364258
Appears in Collections:電機工程學系所

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