Please use this identifier to cite or link to this item: http://hdl.handle.net/11455/44585
DC FieldValueLanguage
dc.contributor.author薛特zh_TW
dc.contributor.authorChattopadhyay, S.en_US
dc.contributor.author陳貴賢zh_TW
dc.contributor.authorChen, K.H.en_US
dc.contributor.authorShi, S.C.en_US
dc.contributor.authorWu, C.T.en_US
dc.contributor.authorChen, C.H.en_US
dc.contributor.authorChen, L.C.en_US
dc.date2006zh_TW
dc.date.accessioned2014-06-06T08:12:27Z-
dc.date.available2014-06-06T08:12:27Z-
dc.identifier.issn0003-6951zh_TW
dc.identifier.urihttp://hdl.handle.net/11455/44585-
dc.description.abstractA "step-edge" model has been proposed to explain the growth of solid nanotips of aluminum nitride (AlN) and indium nitride (InN) grown by thermal and metal organic chemical vapor depositions, respectively. The model predicts a set of apex angles that solid AlN and InN nanotips can have. A statistical distribution of the apex angle in InN nanotips indicates the discrete set of apex angles and its probability of nucleation. (c) 2006 American Institute of Physics.en_US
dc.language.isoen_USzh_TW
dc.relationApplied Physics Lettersen_US
dc.relation.ispartofseriesApplied Physics Letters, Volume 89, Issue 14.en_US
dc.relation.urihttp://dx.doi.org/10.1063/1.2358291en_US
dc.subjectgrowthen_US
dc.subjectconesen_US
dc.subjectgraphiteen_US
dc.subjectcrystalsen_US
dc.subjectsurfacesen_US
dc.subjecthelixen_US
dc.titleSelf-selected apex angle distribution in aluminum nitride and indium nitride nanotipsen_US
dc.typeJournal Articlezh_TW
dc.identifier.doi10.1063/1.2358291zh_TW
item.openairecristypehttp://purl.org/coar/resource_type/c_18cf-
item.fulltextno fulltext-
item.cerifentitytypePublications-
item.grantfulltextnone-
item.languageiso639-1en_US-
item.openairetypeJournal Article-
Appears in Collections:電機工程學系所
Show simple item record
 

Google ScholarTM

Check

Altmetric

Altmetric


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.