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標題: | A light-induced tunneling state in a submicron double barrier tunneling diode with a center-doped well | 作者: | Suen, Y.W. 楊秋忠 Young, C.C. Chang, C.J. Wu, J.C. Wang, S.Y. Lee, C.P. |
關鍵字: | double barrier tunneling diode;magnetic field;impurity state;quantum-confined states;probability | Project: | Physica E | 期刊/報告no:: | Physica E, Volume 6, Issue 1-4, Page(s) 331-334. | 摘要: | We will present the observation of a light-induced meta-stable impurity state in a submicron center-doped double barrier tunneling diode (DBRTD) manufactured by a novel single-step e-beam lithography process in which no further alignment for the interconnect between the bonding pad and the small active device region is required. We attribute the mete-stable tunneling state, which can be switched by light and high voltage bias, to the light- or field-induced charge redistribution in the active tunneling region. (C) 2000 Elsevier Science B.V. All rights reserved. |
URI: | http://hdl.handle.net/11455/44735 | ISSN: | 1386-9477 | DOI: | 10.1016/s1386-9477(99)00166-6 |
Appears in Collections: | 土壤環境科學系 |
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