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|標題:||A light-induced tunneling state in a submicron double barrier tunneling diode with a center-doped well||作者:||Suen, Y.W.
|關鍵字:||double barrier tunneling diode;magnetic field;impurity state;quantum-confined states;probability||Project:||Physica E||期刊/報告no：:||Physica E, Volume 6, Issue 1-4, Page(s) 331-334.||摘要:||
We will present the observation of a light-induced meta-stable impurity state in a submicron center-doped double barrier tunneling diode (DBRTD) manufactured by a novel single-step e-beam lithography process in which no further alignment for the interconnect between the bonding pad and the small active device region is required. We attribute the mete-stable tunneling state, which can be switched by light and high voltage bias, to the light- or field-induced charge redistribution in the active tunneling region. (C) 2000 Elsevier Science B.V. All rights reserved.
|Appears in Collections:||土壤環境科學系|
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